The RS20N90D Is an N-channel enhancement mode power MOS field effect transistor which is produced using Reasunos LVMOS technology. The improved process and cell structure have been especially tailored to low Drain-to-Source On-Resistance, provide superior switching performance and high avalanche engergy. This device is widely used in the power management,synchronous rectification and motor drive.
VDS = 30V,ID =90A
RDS(ON) < 5mΩ @ VGS = 4.5V
RDS(ON) <6mΩ @ VGS = 2.5V
Low Drain-to-Source On-Resistance
High UIS and UIS 100% Test
| Device | Type | size | Thumbnail | Download specification document |
|---|---|---|---|---|
| RS20N90D | 2，000 | 2022.03.06 | RS20N90D TO-252 SPEC_EN A0 |
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