Boosting IC
Advantages:ultra-low leakage current, high temperature resistance
Applications:It is applicable to AC90-264V full voltage adapter, LED driving power supply and other power supply sche
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Dimming IC
Advantages:LLC constant current and constant voltage management chip with dim dimming function supports PWM dimming and 0-10V dimming functions, high-end and low-end direct drive and adaptive dead time setting; High vo
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Constant Voltage IC
Advantages:A LLC resonant half bridge frequency conversion control and management chip adopts a high-precision oscillator, has a working frequency of 350khz, and has the protection functions of soft start, two-stage
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Constant Current IC
Advantages:High PF, high efficiency, no stroboscope, high cost-efficient, extremely low output current ripple: <1%.
Characteristics:Automatic dead time control, simple and reliable scheme, directly driven by upper bridge MOS; prevention of short circuit, open circuit and over temperature.
Application:Education lighting, railway lighting, eyes-protection lamp series, factory lighting, photograph lighting, high-power road lighting, construction lighting, stadium lighting , etc.
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TSPD
Advantages:Peak Off-State Voltage :25-300V ,Low On-state Volage,Low leakage current,Bidirectional Configuration
Application:Household appliances, communication facilities, electric
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TVS
Advantages:ultra-low capacitance, low-clamp voltage, single-channel and multi-channel selection, small packaging
Applications:Portable devices, Ethernet, communication, data interface
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ESD
Advantages:accurate clamp, high reaction speed, low capacity and low feeling
Applications:telecommunication and communication, computer, industrial applications, consumer electronics
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Schottky Barrier Diodes
Advantages:Low VF, low leakage, low cost.
Characteristics:Low forward low voltage drop, low loss, extremely short reverse recovery time, high efficiency.
Application:Display screen power supply, laptop power supply, switching power supply, etc.
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IGBT
Advantages:Narrow mesa design, more optimized groove combination design, higher reliability design, and strict reference to vehicle specification requirements.
Characteristics:Faster switching speed, application frequency up to 60KHz, higher current density up to 400A/cm-2.
Application:OBC, charging pile, welding machine, switching power supply, photovoltaic inverter, energy storage, etc.
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Low Voltage MOSFET-SGT
Advantages:SGT process, breakthrough FOM optimization, covering more application.
Characteristics:Extremely low Rds(ON), low power loss, high EAS capability, high efficiency.
Application:Motor driver, 5G base station, energy storage, high-frequency switch, synchronous rectification.
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Low Voltage MOSFET-Trench
Advantages:Trench process, smaller RSP, both series and parallel configurations can be freely combined and utilized.
Characteristics:Low Rds(ON), moderate junction capacitance, high efficiency and reliable.
Application:Wireless charging, fast charging, motor driver, DC/DC converter, high-frequency switch, synchronous rectification.
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Embedded FRD HV MOSFET
Advantages:The special platinum doping process which can greatly reduce the switching loss caused by reverse recovery.
Characteristics:The leakage current is less than 1 µ A. The recovery softness is appropriate. The electromagnetic interference is reduced.
Application:Motor series, inverter, half bridge/full bridge circuit applications, etc.
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High Voltage MOSFET
Advantages: New lateral variable doping technology, special power MOS structure, excellent characteristics in high-temperature.
Characteristics:Low Rds(ON), moderate junction capacitance, great heat dissipation, low leakage and voltage drop at high temperature.
Application:LED driver, adaptors, industrial switching power supply, Inverters etc.
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Ultra-high Voltage MOSFET
Advantages: New lateral variable doping technology, special power MOS. structure, excellent characteristics in high-temperature.
Characteristics:Ultra high voltage, low Rds(ON), great heat dissipation, low leakage and voltage drop at high temperature.
Application:Smart meter, cabinet power supply, industrial switching power supply, electrical power system, etc.
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Super Junction MOSFET
Advantages:Utilizing the multi-layer epitaxy process, outstanding EMI performance and anti-surge capabilities.
Characteristics:Extremely low Rds(ON) and small package, low junction capacitance, large EMI margin.
Application:LED driver, PFC circuit, switching power supply, UPS , new energy power equipment, etc.
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SiC Schottky Barrier Diode
Advantages:The national military standard of China with stable process and reliable quality.
Characteristics:Extremely low reverse recovery current, srtong ability of anti surge current, high power, high efficiency, high frequency, high-temperature resistance.
Application:PFC circuit , DC/AC inverter for solar or wind power generation, UPS , motor driver, etc.
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SiC MOSFET
Advantages:The national military standard of China with stable process and reliable quality.
Characteristics:High frequency, high power, high efficiency and low Rds(ON).
Application:Solar inverter, high-voltage DC/DC converter, motor driver, UPS , switching power supply, converters, charging pile, etc.
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