The RSU7N65Dis an N-channel enhancement mode high voltage power MOSFETs produced using Reasunos COOL MOS technology. It achieves low Drain-to-Source On-Resistance,has low conduction loss and switching losses. can be design to their power converters with high efficiency, high power density, and superior thermal behavior. It’s universal applicable, for example, it is suitable for SMPS,Adapter and LED Drive.
VDS = 650V,ID =7A
RDS(ON) < 650mΩ @ VGS = 10V
Low Drain-to-Source On-Resistance
High UIS and UIS 100% Test
| Device | Type | size | Thumbnail | Download specification document |
|---|---|---|---|---|
| RSU7N65D | 2，000 | 2022.03.06 | RSU7N65D_TO-252.SPEC_EN A3 |
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