The RS16N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Reasunos proprietary HV_MOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This devices are widely used in SMPS，Adapter and LED Drive.
VDS =650V,ID =16A
RDS(ON) <0.52Ω@ VGS = 10V
High Pulse Avalanche Engergy
Low Drain-to-Source On-Resistance
High UIS and UIS 100% Test
| Device | Type | size | Thumbnail | Download specification document |
|---|---|---|---|---|
| RS16N65F | 2，000 | 2022.03.06 | RS16N65F TO-220F SPEC_EN A7 |
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