The RS15N50F is an N-channel enhancement mode power MOS field effect transistor which is produced using Reasunos proprietary HV_MOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This devices are widely used in SMPS,Adapter and LED Drive.
VDS =500V,ID =15A
RDS(ON) <0.42Ω@ VGS = 10V
High Pulse Avalanche Engergy
Low Drain-to-Source On-Resistance
High UIS and UIS 100% Test
Device | Type | size | Thumbnail | Download specification document |
---|---|---|---|---|
RS15N50F | 2,000 | 2022.03.06 | RS15N50F TO-220F SPEC_EN A3 |
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